hi-sincerity microelectronics corp. spec. no. : preliminary data issued date : 1998.07.01 revised date : 1999.08.01 page no. : 1/5 hsmc product specification HU603AL n-channel logic level enhancement mode field effect transistor description this very high density process has been especially tailored to minimize on- state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as dc/dc converters and other battery powered circuits where fast switching, low in- line power loss, and resistance to transients are needed. absolute maximum ratings (ta=25 c) ? maximum temperatures operating and storage temperature ................................................................................ -65 ~ +175 c ? maximum power dissipation total power dissipation at tc=25 c ............................................................................................... 60 w derate above 25 c ................................................................................................................ 0.4 w / c ? maximum voltages and currents drain-source voltage ........................................................................................................... ........... 30 v gate-source voltage -continuous................................................................................................ . 20 v drain current -continuous ...................................................................................................... ........ 30 a drain current -pulsed .......................................................................................................... ......... 100 a thermal resistance, junction-to-case .................................................................................. 2.5 c / w thermal resistance, junction-to-ambient............................................................................ 62.5 c / w electrical characteristics ? off characteristics symbol parameter condition min typ max unit bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v i dss zero gate voltage drain current v ds =30v, v gs =0v - - 10 ua +i gss gate-body leakage ,forward v gs =20v, v ds =0v - - 100 na -i gss gate-body leakage ,reverse v gs =-20v, v ds =0v - - -100 na ? on characteristics v ds =v gs , i d =250ua 1.1 - 3 v gs(th) gate threshold voltage v ds =v gs , i d =10ma 1.4 - 3 v v gs =10v, i d =25a - 0.018 0.022 r ds (on) static drain-source on-resistance v gs =4.5v, i d =10a - 0.029 0.040 ? v gs =10v, v ds =10v 60 - - i ds (on) on-state drain current v gs =4.5v, v ds =10v 15 - - a g fs forward transconductance v ds =10v, i d =25a - 26 - s ? dynamic characteristic c iss input capacitance - 1100 - pf c oss output capacitance - 600 - pf c rss reverse transfer capacitance v ds =15v, v gs =0v f=1.0mhz - 180 - pf
hi-sincerity microelectronics corp. spec. no. : preliminary data issued date : 1998.07.01 revised date : 1999.08.01 page no. : 2/5 hsmc product specification ? switching characteristics symbol parameter condition min typ max unit turn-on delay time - - 30 ns t(on) turn-on rise time - - 110 ns turn-off delay time - - 150 ns t(off) turn-off fall time v ds =15v, i d =25a v gs =10v, r gen =24 ? - - 130 ns q g total gate charge - - 45 nc q gs gate-source charge - - 10 nc q gd gate-drain charge v ds =10v, i d =25a, v gs =10v - - 10 nc ? drain-source diode characteristics and maximum ratings maximum continuous drain-source diode forward current --25a v sd drain-source diode forward voltage v gs =0v, i s =25a --1.3v characteristics curve on-region characteristic 0 20 40 60 80 100 012345 drain-source voltage (v) drain-source current (a) vgs=10v 8v 5v 6 v 7v 3v 4.5v 4v on-resistance variation with gate voltage & drain current 0.5 1.0 1.5 2.0 2.5 3.0 0 20406080 drain current (a) normalized drain-source on- resistance 8v 7v 6v 5 v 4.5v vgs= 4v 10 v on resistance variation & temperature 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 25 50 75 100 125 150 junction temperature (c) normalized drain-source on-resistance id=25a vgs=10v on-resistance variation & drain current & temperature 0.5 1 1.5 2 2.5 020406080 drain current (a) normalized drain-source on- resistance vgs=10v tj=125c tj=25c
hi-sincerity microelectronics corp. spec. no. : preliminary data issued date : 1998.07.01 revised date : 1999.08.01 page no. : 3/5 hsmc product specification drain current variation & gate voltage & temperature 0 10 20 30 40 50 0123456 gate-source voltage (v) drain current (a) tj=125c tj= 25c sub-threshold drain current variation & gate voltage & temperature 0 0.01 0.02 0.03 0.04 0.05 0.06 0.5 1.0 1.5 2.0 2.5 gate-source voltage (v) drain current (a) tj=125c tj=25c gate threshold variation & temperature 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 25 50 75 100 125 150 junction temperature (c) gate-source threshold voltage (v) id=10ma id= 250ua id= 1m a capacitance characteristics 0 500 1000 1500 2000 0 5 10 15 20 25 30 drain-source voltage (v) capacitance (pf) ciss crss coss breakdown voltage variation & temperature 0.98 1 1.02 1.04 1.06 1.08 1.1 25 50 75 100 125 150 junction temperature (c) normalized drain-source breakdown voltage body diode forward voltage variation & current & temperature 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 body diode forward voltage (v) reverse drain current (a) tj=125c tj= 25c
hi-sincerity microelectronics corp. spec. no. : preliminary data issued date : 1998.07.01 revised date : 1999.08.01 page no. : 4/5 hsmc product specification trancient thermal response curve 0.01 0.1 1 0.1 1 10 100 1000 time (ms) normalized effective transient thermal resistance 0.01 0.1 0.05 0.02 0.2 0.5 single pulse r jc(t) = r(t) * r jc(t) r jc =2.5 c / w t2 p(pk) t1 tj-tc=p* r jc(t) duty cycle,d=t1/t2 transductance variation & drain current & temperature 0 5 10 15 20 25 30 0 1020304050 drain current (a) transconductance (s) tj=25c tj=125c maximum safe operating area 1 10 100 0.1 1 10 100 drain-source voltage (v) drain-source current (a) vgs=20v single pulse tc=25c rds(on) line dc 100ms 10ms 1ms 1us
hi-sincerity microelectronics corp. spec. no. : preliminary data issued date : 1998.07.01 revised date : 1999.08.01 page no. : 5/5 hsmc product specification to-263 dimension *:typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.3800 0.4050 9.65 10.29 i 0.0500 0.0700 1.27 1.78 b 0.3300 0.3700 8.38 9.40 j - *0.1000 - *2.54 c - 0.0550 - 1.40 k 0.0450 0.0550 1.14 1.40 d 0.5750 0.6250 14.61 15.88 l 0.0200 0.0390 0.51 0.99 e 0.1600 0.1900 4.06 4.83 1 -- 6 8 f 0.0450 0.0550 1.14 1.40 2 -- 6 8 g 0.0900 0.1100 2.29 2.79 3 -- 0 5 h 0.0180 0.0290 0.46 0.74 notes : 1.dimension and tolerance based on our spec. dated jan. 09,1998. 2.controlling dimension : millimeters. 3.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.if there is any question with packing specification or packing method, please contact your local hsmc sales office. material : ? lead : 42 alloy ; solder plating ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. head office and factory : ? head office (hi-sincerity microelectronics corp.) : 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel : 886-2-25212056 fax : 886-2-25632712, 25368454 ? factory 1 : no. 38, kuang fu s. rd., fu-kou hsin-chu industrial park hsin-chu taiwan. r.o.c tel : 886-3-5983621~5 fax : 886-3-5982931 ? factory 2 : no. 17-1, ta-tung rd., fu-kou hsin-chu industrial park hsin-chu taiwan. r.o.c tel : 886-3-5977061 fax : 886-3-5979220 a b c d 123 k l j g h f e 2 1 2 3 i style : pin 1.gate 2.drain 3.source 3-lead to-263 plastic surface mounted package hsmc package code : u marking : hsmc logo part number date code product series rank
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